A complete model of the I―V characteristics for narrow-gate MOSFET'sSHAO-SHIUN CHUNG, S.I.E.E.E. transactions on electron devices. 1990, Vol 37, Num 4, pp 1020-1030, issn 0018-9383, 11 p.Article

Treshold voltage models of the narrow-gate effect in micron and submicron MOSFETsSHAO-SHIUN CHUNG, S; CHIH-TANG SAH.Solid-state electronics. 1988, Vol 31, Num 6, pp 1009-1021, issn 0038-1101Article

A subthreshold model of the narrow-gate effect in MOSFET'sSHAO-SHIUN CHUNG, S; CHIH-TANG SAH.I.E.E.E. transactions on electron devices. 1987, Vol 34, Num 12, pp 2521-2529, issn 0018-9383Article

A new approach to modeling the substrate current of pre-stressed and post-stressed MOSFET'sJIUUN-JER YANG; SHAO-SHIUN CHUNG, S; PENG-CHENG CHOU et al.I.E.E.E. transactions on electron devices. 1995, Vol 42, Num 6, pp 1113-1119, issn 0018-9383Article

Transconductance enhancement due to back bias for submicron NMOSFETJYH-CHYURN GUO; MING-CHIEN CHANG; CHIH-YUAN LU et al.I.E.E.E. transactions on electron devices. 1995, Vol 42, Num 2, pp 288-294, issn 0018-9383Article

Performance and reliability evaluation of high dielectric LDD spacer on deep sub-micrometer LDD MOSFETJYH-CHYUNR GUO; CHIH-YUAN LU; CHING-HSIANG HSU, C et al.I.E.E.E. transactions on electron devices. 1994, Vol 41, Num 7, pp 1239-1248, issn 0018-9383Article